SiC二极管降压变换器的性能评价

2011 INTERNATIONAL CONFERENCE ON RECENT ADVANCEMENTS IN ELECTRICAL, ELECTRONICS AND CONTROL ENGINEERING Pub Date : 2011-12-01 DOI:10.1109/ICONRAEECE.2011.6129732

Naman Dwivedi, Akash Verma, Dipta Ghosh, R. Pratap, V. Agarwal

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引用次数: 1

摘要

对硅二极管和碳化硅二极管的开环设定点控制单片机降压变换器进行了比较研究。仿真和硬件结果表明，无论是在充电模式还是在放电模式下，SiC都比硅二极管具有更好的性能。硬件测试结果表明，用SiC (CSD04060)代替Si (MUR860)二极管后，稳定时间和峰值超调量都大大降低。输出电压的外形系数有一点改进。这是因为流过SiC二极管的反向恢复电流非常低或可以忽略不计。由于SiC (CSD04060)二极管的开关损耗比Si (MUR860)二极管降低，降压变换器的整体效率提高了约5%。

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Performance evaluation of buck converter with SiC diode

A comparative study has been made for open loop, set point controlled microcontroller based buck converter with Si and SiC diode. The simulation and hardware results indicate that both in charging mode as well as in discharging mode SiC has a better performance compared to that with Si diode. Hardware results show that settling time and peak overshoot reduced to a great extent when SiC (CSD04060) is used in place of Si (MUR860) diode. There is a little improvement in form factor of the output voltage. This is because of very low or negligible value of reverse recovery current flowing through SiC diode. Due to the reduction in the switching losses in case of SiC (CSD04060) diode as compared to Si (MUR860) diode, the overall efficiency of buck converter is increased by about 5 percent.

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2011 INTERNATIONAL CONFERENCE ON RECENT ADVANCEMENTS IN ELECTRICAL, ELECTRONICS AND CONTROL ENGINEERING

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