Enhanced electrical performance of the InP/InGaAs single heterojunction bipolar transistor in terms of the cutoff frequency

In Advanced communication technologies, Bipolar Heterojunction Transistors (HBTs) were increasingly used because of their excellent electrical characteristics. In this paper, we have designed an InP/InGaAs Single Heterojunction Bipolar Transistor SHBT using the simulator TCAD-Silvaco (Technology Computer Aided Design) according to its technological characteristics (Meshing, doping profile, semiconductor materials….). We have integrated in the simulation the physical models contained in the simulator to consider the physical mechanisms which happen within the electronic device. Afterwards, we have studied the effect of two technological parameters which are the base doping concentration and the base width on the electrical performance in terms of the cutoff frequency fT. We then determined the optimum parameters in order to define an optimized device SHBT adapted for high frequency applications.