表面处理对cdznese辐射探测器性能的影响

2021 13th Spanish Conference on Electron Devices (CDE) Pub Date : 2021-06-09 DOI:10.1109/CDE52135.2021.9455744

L. Martínez-Herraiz, E. Ruiz, A. Braña, J. Plaza

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引用次数: 0

摘要

在本研究中，为了获得击穿电压、泄漏电流和肖特基二极管势垒高度(SBH)等电学特性，采用了表面抛光处理的I-V曲线和efm相位测量方法，采用热离子发射模型(TE)和efm相位抛物线模型计算。结果表明:与1 μm氧化铝溶液抛光相比，0.03 μm氧化铝溶液抛光产生更高的SBH、更低的漏电流和更高的击穿电压;

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Effects of Surface Treatments on the Performance of CdZnTeSe Radiation Detectors

In the present study, I-V curves and EFM-Phase measurement for surface polishing treatments are used in order to obtain electrical properties like breakdown voltages, leakage currents and Schottky Diode Barrier Height (SBH) calculated by Thermionic Emission model (TE) and parabolic model of EFM-Phase. The results showed that a polishing treatment with 0.03 μm grain size alumina powder solution induces a higher SBH, lower leakage current and higher breakdown voltage compared to that with 1 μm alumina solution.

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2021 13th Spanish Conference on Electron Devices (CDE)

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