W. Perndl, W. Wilhelm, H. Knapp, M. Wurzer, K. Aufinger, T. Meister, J. Bock, W. Simburger, A. Scholtz
{"title":"采用SiGe双极技术的60 GHz宽带放大器","authors":"W. Perndl, W. Wilhelm, H. Knapp, M. Wurzer, K. Aufinger, T. Meister, J. Bock, W. Simburger, A. Scholtz","doi":"10.1109/BIPOL.2004.1365803","DOIUrl":null,"url":null,"abstract":"A broadband amplifier with 16 dB gain and a 3-dB bandwidth of more than 60 GHz is presented. This amplifier exhibits a 1-dB compression point of -9.5 dBm and a third-order intercept point of +2.1 dBm referred to the input. The maximum differential output voltage swing is 1.5 VPP. Clear output eye diagrams have been measured up to 100 Gbit/s. The chip is manufactured in an advanced SiGe bipolar technology and consumes a power of 770 mW at a supply voltage of -5.0 V.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"A 60 GHz broadband amplifier in SiGe bipolar technology\",\"authors\":\"W. Perndl, W. Wilhelm, H. Knapp, M. Wurzer, K. Aufinger, T. Meister, J. Bock, W. Simburger, A. Scholtz\",\"doi\":\"10.1109/BIPOL.2004.1365803\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A broadband amplifier with 16 dB gain and a 3-dB bandwidth of more than 60 GHz is presented. This amplifier exhibits a 1-dB compression point of -9.5 dBm and a third-order intercept point of +2.1 dBm referred to the input. The maximum differential output voltage swing is 1.5 VPP. Clear output eye diagrams have been measured up to 100 Gbit/s. The chip is manufactured in an advanced SiGe bipolar technology and consumes a power of 770 mW at a supply voltage of -5.0 V.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365803\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365803","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 60 GHz broadband amplifier in SiGe bipolar technology
A broadband amplifier with 16 dB gain and a 3-dB bandwidth of more than 60 GHz is presented. This amplifier exhibits a 1-dB compression point of -9.5 dBm and a third-order intercept point of +2.1 dBm referred to the input. The maximum differential output voltage swing is 1.5 VPP. Clear output eye diagrams have been measured up to 100 Gbit/s. The chip is manufactured in an advanced SiGe bipolar technology and consumes a power of 770 mW at a supply voltage of -5.0 V.
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