用氩束表面活化的方法在硅和陶瓷晶圆之间进行晶圆尺度的室温键合

Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090) Pub Date : 2001-01-21 DOI:10.1109/MEMSYS.2001.906478

H. Takagi, R. Maeda, T. Suga

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引用次数: 3

摘要

提出了一种不同材料间的室温晶圆键合方法。4英寸硅晶片与3或4英寸陶瓷晶片经氩束表面溅射刻蚀后在真空中结合。通过室温工艺可获得相当于块状材料的强粘结。该方法使不同材料之间的键合不受热膨胀失配和晶格失配的影响。此外，由于不需要任何加热过程和外部载荷将两个试样强制在一起，因此也实现了非常低的损伤粘合。

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Wafer-scale room-temperature bonding between silicon and ceramic wafers by means of argon-beam surface activation

A room-temperature wafer bonding method between dissimilar materials is developed. 4-inch Si wafers and 3 or 4-inch ceramic wafers are bonded in vacuum after surface sputter etching by Ar beam. Strong bonding equivalent to bulk material is achieved by room-temperature process. The method enables the bonding between dissimilar materials regardless the thermal expansion mismatch and crystal lattice mismatch. In addition, it also realizes very low damage bonding because it does not require any heating process and external load to force two specimens together.

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来源期刊

Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)

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