高效MQW led中基氮化物的MOCVD生长与制备

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics Pub Date : 1997-05-18 DOI:10.1109/CLEO.1997.602319

S. Denbaars, P. Kozodoy, A. Abare, M. Mack, S. Keller, U. Mishra, L. Coldren

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引用次数: 0

摘要

我们建立了一个模型，在这个模型中，我们假设辐射跃迁涉及传导带和价带的高斯样尾巴。该模型可以考虑光强和发射峰位置的温度依赖性和发射带宽的温度不敏感性。在这种方法中，排放峰值位置可以表示为:

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MOCVD growth and fabrication of group-Ill nitrides for high-efficiency MQW LEDs

bandgap energy of the electroluminescence peak and anomalous temperature shift) we developed a model in which we assume that the radiative transitions involve Gaussian-like tails of conduction and valence bands. The model can account for temperature dependence of light intensity and emission peak position, and for temperature insensitivity of emission bandwidth. The emission peak position can be expressed in this approach as:

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CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics

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