锗稀释磁性半导体纳米结构的结构特性

J. Zou, Yong Wang, F. Xiu, Zuoming Zhao, K. Wang
{"title":"锗稀释磁性半导体纳米结构的结构特性","authors":"J. Zou, Yong Wang, F. Xiu, Zuoming Zhao, K. Wang","doi":"10.1109/COMMAD.2012.6472336","DOIUrl":null,"url":null,"abstract":"In this study, the structural characteristics of GeMn diluted magnetic semiconductor (DMS) thin films grown by molecular beam epitaxy (MBE) with different growth conditions are summarised.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural characteristics of GeMn diluted magnetic semiconductor nanostructures\",\"authors\":\"J. Zou, Yong Wang, F. Xiu, Zuoming Zhao, K. Wang\",\"doi\":\"10.1109/COMMAD.2012.6472336\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, the structural characteristics of GeMn diluted magnetic semiconductor (DMS) thin films grown by molecular beam epitaxy (MBE) with different growth conditions are summarised.\",\"PeriodicalId\":136573,\"journal\":{\"name\":\"COMMAD 2012\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"COMMAD 2012\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2012.6472336\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"COMMAD 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2012.6472336","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文综述了不同生长条件下分子束外延法(MBE)生长的GeMn稀释磁性半导体(DMS)薄膜的结构特征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural characteristics of GeMn diluted magnetic semiconductor nanostructures
In this study, the structural characteristics of GeMn diluted magnetic semiconductor (DMS) thin films grown by molecular beam epitaxy (MBE) with different growth conditions are summarised.
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