商用SiGe HBT BiCMOS工艺中传输线的设计与实现

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398165

M. Morton, J. Andrews, J. Lee, J. Papapolymerou, J. Cressler, D. Cho, K. Hong, H. Shin, K. Park, S. Yi

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引用次数: 10

摘要

本文研究了在商用SiGe HBT BiCMOS技术中实现传输线的可行性。采用4层金属工艺SiGe HBT技术设计、制作了上下金属化层(间距为3.24 /spl mu/m)的薄膜微带传输线，并测量了高达110 GHz的传输线。这些测量结果与全波电磁模拟结果进行了比较，以获得更多的设计见解。额外的EM模拟用于探索设计规则变化的影响，这些变化不允许大范围的地平面没有开槽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On the design and implementation of transmission lines in commercial SiGe HBT BiCMOS processes

This paper examines the feasibility of implementing transmission lines in a commercially-available SiGe HBT BiCMOS technology. Thin film microstrip transmission lines, using the top and bottom metalization layers (with a 3.24 /spl mu/m separation), from a 4 layer metal process SiGe HBT technology were designed, fabricated, and measured up to 110 GHz. These measured results were compared to full wave EM simulation results to gain additional design insight. Additional EM simulations were used to explore the effects of design rule changes which do not allow for large extents of ground plane without slotting.

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Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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