{"title":"一个0.5V 0.5mW开关电流源振荡器","authors":"M. Babaie, M. Shahmohammadi, R. Staszewski","doi":"10.1109/RFIC.2015.7337735","DOIUrl":null,"url":null,"abstract":"This paper proposes a new RF oscillator topology that is suitable for ultra-low voltage and power applications. By employing alternating current source transistors, the structure combines the benefits of low supply voltage operation of conventional NMOS cross-coupled oscillators together with high current efficiency of the complementary push-pull oscillators. In addition, the 1/f noise upconversion is also reduced. The 40nm CMOS prototype exhibits an average FoM of 189.5 dBc/Hz over 4-5 GHz tuning range, dissipating 0.5mW from 0.5V power supply, while abiding by the technology manufacturing rules.","PeriodicalId":121490,"journal":{"name":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"34 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A 0.5V 0.5mW switching current source oscillator\",\"authors\":\"M. Babaie, M. Shahmohammadi, R. Staszewski\",\"doi\":\"10.1109/RFIC.2015.7337735\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes a new RF oscillator topology that is suitable for ultra-low voltage and power applications. By employing alternating current source transistors, the structure combines the benefits of low supply voltage operation of conventional NMOS cross-coupled oscillators together with high current efficiency of the complementary push-pull oscillators. In addition, the 1/f noise upconversion is also reduced. The 40nm CMOS prototype exhibits an average FoM of 189.5 dBc/Hz over 4-5 GHz tuning range, dissipating 0.5mW from 0.5V power supply, while abiding by the technology manufacturing rules.\",\"PeriodicalId\":121490,\"journal\":{\"name\":\"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"34 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2015.7337735\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2015.7337735","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper proposes a new RF oscillator topology that is suitable for ultra-low voltage and power applications. By employing alternating current source transistors, the structure combines the benefits of low supply voltage operation of conventional NMOS cross-coupled oscillators together with high current efficiency of the complementary push-pull oscillators. In addition, the 1/f noise upconversion is also reduced. The 40nm CMOS prototype exhibits an average FoM of 189.5 dBc/Hz over 4-5 GHz tuning range, dissipating 0.5mW from 0.5V power supply, while abiding by the technology manufacturing rules.
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