Jin Dong-yue, Zhang Wan-rong, Xie Hong-yun, Wang Yang
{"title":"非均匀间距的多指功率SiGe hbt","authors":"Jin Dong-yue, Zhang Wan-rong, Xie Hong-yun, Wang Yang","doi":"10.1109/ICMMT.2007.381446","DOIUrl":null,"url":null,"abstract":"Based on a three-dimensional thermal-electrical model, non-uniform finger spacing power SiGe HBT was designed and fabricated. Experiment result shows that the peak temperature of non-uniform spacing SiGe HBT is Iowed by 22 K compared with that of uniform space HBT. For the same nonuniform spacing HBT, temperature non-uniformity among the fingers is improved obviously at different biases. The higher power dissipation PDC is, the better temperature improvement of non-uniform spacing HBT is. Because of the reducing of peak temperature, power SiGe HBTs with non-uniform Spacing can work at higher bias and has higher power handling capability.","PeriodicalId":409971,"journal":{"name":"2007 International Conference on Microwave and Millimeter Wave Technology","volume":"114 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Multi-finger power SiGe HBTs with non-uniform Spacing\",\"authors\":\"Jin Dong-yue, Zhang Wan-rong, Xie Hong-yun, Wang Yang\",\"doi\":\"10.1109/ICMMT.2007.381446\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Based on a three-dimensional thermal-electrical model, non-uniform finger spacing power SiGe HBT was designed and fabricated. Experiment result shows that the peak temperature of non-uniform spacing SiGe HBT is Iowed by 22 K compared with that of uniform space HBT. For the same nonuniform spacing HBT, temperature non-uniformity among the fingers is improved obviously at different biases. The higher power dissipation PDC is, the better temperature improvement of non-uniform spacing HBT is. Because of the reducing of peak temperature, power SiGe HBTs with non-uniform Spacing can work at higher bias and has higher power handling capability.\",\"PeriodicalId\":409971,\"journal\":{\"name\":\"2007 International Conference on Microwave and Millimeter Wave Technology\",\"volume\":\"114 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 International Conference on Microwave and Millimeter Wave Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2007.381446\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Conference on Microwave and Millimeter Wave Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2007.381446","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multi-finger power SiGe HBTs with non-uniform Spacing
Based on a three-dimensional thermal-electrical model, non-uniform finger spacing power SiGe HBT was designed and fabricated. Experiment result shows that the peak temperature of non-uniform spacing SiGe HBT is Iowed by 22 K compared with that of uniform space HBT. For the same nonuniform spacing HBT, temperature non-uniformity among the fingers is improved obviously at different biases. The higher power dissipation PDC is, the better temperature improvement of non-uniform spacing HBT is. Because of the reducing of peak temperature, power SiGe HBTs with non-uniform Spacing can work at higher bias and has higher power handling capability.
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