采用耦合谐振器的65nm CMOS功率放大器，PAE为32.9%，功率为15.3 dBm, 21.6-41.6 GHz

2016 IEEE Asian Solid-State Circuits Conference (A-SSCC) Pub Date : 2016-11-01 DOI:10.1109/ASSCC.2016.7844206

Haikun Jia, C. Prawoto, B. Chi, Zhihua Wang, C. Yue

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引用次数: 18

摘要

提出了一种基于65nm CMOS的宽带毫米波功率放大器。所有匹配网络都采用了基于耦合谐振器的宽带匹配技术。在输出匹配网络中，耦合谐振器可以在较宽的频率范围内实现阻抗变换。在输入/级间匹配网络中，耦合谐振器两侧LC网络的非耦合谐振频率向相反方向移动，以延长带宽并减小纹波。测得的PA芯片峰值PAE达到32.9%，饱和输出功率达到15.3 dBm。在21.6 ~ 41.6 GHz范围内的分数带宽为63.3%，是目前已知的体CMOS毫米波PAs中带宽最宽的。

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A 32.9% PAE, 15.3 dBm, 21.6–41.6 GHz power amplifier in 65nm CMOS using coupled resonators

This paper presents a wideband millimeter-wave (mm-wave) power amplifier in 65nm CMOS. Coupled resonator based wideband matching technique is used in all the matching network. In the output matching network, the coupled resonator can achieve impedance transformation over a wide frequency range. In the input/inter-stage matching network, the uncoupled resonant frequencies of LC network at two sides of the coupled resonator are shifting towards opposite direction to extend the bandwidth and reduce ripple. The measured PA chip achieves 32.9% peak PAE, 15.3 dBm saturated output power. The fractional bandwidth is 63.3% from 21.6 to 41.6 GHz, which is the widest among reported bulk CMOS mm-wave PAs according to the authors' knowledge.

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2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)

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