K. Tsarik, S. D. Fedotov, V. Nevolin, V. Statsenko
{"title":"MBE在离轴和顺轴基底取向的3a - sic /Si(111)模板上生长Ga(Al)N的结构和形态特性","authors":"K. Tsarik, S. D. Fedotov, V. Nevolin, V. Statsenko","doi":"10.1117/12.2521959","DOIUrl":null,"url":null,"abstract":"Results of surface morphology and crystalline structure had shown for Ga(Al)N layers which was grown by MBE on 3С- SiC/Si(111) virtual substrates with on-axis and 4° off-axis orientation. Roughness values had increased up to ~7 nm for on-axis and to ~5 nm for 4° off-axis orientation after 560 nm deposition of GaN. Monocrystalline GaN(0002) was verified by ω-rocking curve measurement with FWHM 0.61-0.76° for on-axis and 0.55-0.65° for 4° off-axis orientation. Wafer bow shown the ascending up to ~18 μm for on-axis and ~12 μm for 4° off-axis orientation and tensile strain for all samples had been confirmed.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"158 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Structural and morphological properties of Ga(Al)N grown by MBE on 3C-SiC/Si (111) templates with off-axis and on-axis substrate orientation\",\"authors\":\"K. Tsarik, S. D. Fedotov, V. Nevolin, V. Statsenko\",\"doi\":\"10.1117/12.2521959\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Results of surface morphology and crystalline structure had shown for Ga(Al)N layers which was grown by MBE on 3С- SiC/Si(111) virtual substrates with on-axis and 4° off-axis orientation. Roughness values had increased up to ~7 nm for on-axis and to ~5 nm for 4° off-axis orientation after 560 nm deposition of GaN. Monocrystalline GaN(0002) was verified by ω-rocking curve measurement with FWHM 0.61-0.76° for on-axis and 0.55-0.65° for 4° off-axis orientation. Wafer bow shown the ascending up to ~18 μm for on-axis and ~12 μm for 4° off-axis orientation and tensile strain for all samples had been confirmed.\",\"PeriodicalId\":388511,\"journal\":{\"name\":\"International Conference on Micro- and Nano-Electronics\",\"volume\":\"158 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Micro- and Nano-Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2521959\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Micro- and Nano-Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2521959","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structural and morphological properties of Ga(Al)N grown by MBE on 3C-SiC/Si (111) templates with off-axis and on-axis substrate orientation
Results of surface morphology and crystalline structure had shown for Ga(Al)N layers which was grown by MBE on 3С- SiC/Si(111) virtual substrates with on-axis and 4° off-axis orientation. Roughness values had increased up to ~7 nm for on-axis and to ~5 nm for 4° off-axis orientation after 560 nm deposition of GaN. Monocrystalline GaN(0002) was verified by ω-rocking curve measurement with FWHM 0.61-0.76° for on-axis and 0.55-0.65° for 4° off-axis orientation. Wafer bow shown the ascending up to ~18 μm for on-axis and ~12 μm for 4° off-axis orientation and tensile strain for all samples had been confirmed.
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