FinFET及以后的新型接触金属化方案

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI:10.1109/EDTM.2018.8421448

J. Koike, M. Hosseini, D. Ando, Y. Sutou

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引用次数: 2

摘要

提出了一种新的Co/CoTix合金金属化方案，以取代传统的W接触插头和TiN/Ti势垒，以缓解MOL在10 nm以下节点随着器件的微缩而增加的寄生电阻。CoTix合金层退火后，在Co/Si界面处形成外延的Co硅化物和TiOx。在这种界面结构下，高掺杂n-Si的接触电阻率为10^{-9}\ Ω\ cm}^{2}。

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New Contact Metallization Scheme for FinFET and Beyond

A new metallization scheme of Co/CoTix alloy is proposed to replace conventional W contact plug and TiN/Ti barrier so as to alleviate increasing parasitic resistance of MOL with device scaling in sub-10 nm node. Annealing of the CoTix alloy layer led to the formation of epitaxial Co silicide and TiOx at the Co/Si interface. With this interface structure, a low contact resistivity of 10^{-9}\ Ω\ cm}^{2} was obtained on highly doped n-Si.

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来源期刊

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

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