用于32nm以下逻辑器件的先进结形成

2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI:10.1109/IWJT.2010.5474970

S. Deshpande, A. Ozcan, D. Wall, Eunha Kim, O. Gluschenkov

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引用次数: 0

摘要

这篇论文的目的是对新工艺和工艺工具(植入和退火)的最新进展进行概述。还包括新植入工艺的影响，如冷植入和预非晶化(PAI)植入对硅化镍(NiSi)形成的细节。我们还将讨论离子注入过程中晶圆温度对当今先进器件节点中通道应力保留和浅结的微妙影响。

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Advanced junction formation for sub-32nm logic devices

This paper is meant to be a general overview of recent advances in new processes and process tooling (implant and anneal) for advanced junction formation. Also included are details of impact of novel implant processes, such as cold implant and pre-amorphization (PAI) implants on Nickel Silicide (NiSi) formation. We will also discuss subtle impacts of wafer temperature during ion implantation on channel stress retention and shallow junctions in today's advanced device nodes.

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来源期刊

2010 International Workshop on Junction Technology Extended Abstracts

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