一种用于高速双极lsi的自对准射极基极NiSi电极技术

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1992-10-07 DOI:10.1109/BIPOL.1992.274076

T. Iinuma, N. Itoh, K. Inou, H. Nakajima, S. Matsuda, I. Kunishima, K. Suguro, Y. Katsumata, H. Iwai

{"title":"一种用于高速双极lsi的自对准射极基极NiSi电极技术","authors":"T. Iinuma, N. Itoh, K. Inou, H. Nakajima, S. Matsuda, I. Kunishima, K. Suguro, Y. Katsumata, H. Iwai","doi":"10.1109/BIPOL.1992.274076","DOIUrl":null,"url":null,"abstract":"The characteristics of double polysilicon self-aligned bipolar transistors with advanced 0.4- mu m NiSi salicide base electrodes are reported. Since NiSi/polysilicon contact resistance is lower than that of TiSi/sub 2//polysilicon and the process temperature is lower, the result is a high-performance bipolar device. A very low base resistance of 91 Omega was obtained.<<ETX>>","PeriodicalId":286222,"journal":{"name":"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A self-aligned emitter base NiSi electrode technology for advanced high-speed bipolar LSIs\",\"authors\":\"T. Iinuma, N. Itoh, K. Inou, H. Nakajima, S. Matsuda, I. Kunishima, K. Suguro, Y. Katsumata, H. Iwai\",\"doi\":\"10.1109/BIPOL.1992.274076\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The characteristics of double polysilicon self-aligned bipolar transistors with advanced 0.4- mu m NiSi salicide base electrodes are reported. Since NiSi/polysilicon contact resistance is lower than that of TiSi/sub 2//polysilicon and the process temperature is lower, the result is a high-performance bipolar device. A very low base resistance of 91 Omega was obtained.<<ETX>>\",\"PeriodicalId\":286222,\"journal\":{\"name\":\"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1992.274076\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1992.274076","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

报道了采用先进的0.4 μ m硅酸盐基电极的双多晶硅自对准双极晶体管的特性。由于NiSi/多晶硅的接触电阻低于TiSi/ sub2 //多晶硅，且工艺温度更低，因此得到了高性能的双极器件。得到了极低的91 ω的基极电阻

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A self-aligned emitter base NiSi electrode technology for advanced high-speed bipolar LSIs

The characteristics of double polysilicon self-aligned bipolar transistors with advanced 0.4- mu m NiSi salicide base electrodes are reported. Since NiSi/polysilicon contact resistance is lower than that of TiSi/sub 2//polysilicon and the process temperature is lower, the result is a high-performance bipolar device. A very low base resistance of 91 Omega was obtained.<>

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Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting

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