中红外激光异质结构AlGaInAsSb/GaInSbAsP/GaSb(InAs)

5th International Workshop on Laser and Fiber-Optical Networks Modeling, 2003. Proceedings of LFNM 2003. Pub Date : 2003-11-17 DOI:10.1109/LFNM.2003.1246079

V. Kuchinskii, V. I. Vasil’ev, G. S. Gagis, A. G. Deryagin, V. Dudelev

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引用次数: 0

摘要

这项工作表明，五元固溶体(PSS) AlGaInAsSb和GaInSbAsP等周期地与GaSb和InAs衬底相结合，为控制异质结参数提供了广泛的可能性。在光波范围/spl λ /=3-4/spl mu/m范围内可形成异质结I、II和III型。价态和电导率带偏移可以在一个恒定的有源区能隙的大范围内变化。采用液相外延法(LPE)在570 ~ 600℃/spl温度下从富sb熔体中生长出AlGaInAsSb/GaInSbAsP/GaSb(InAs)异质结构。

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Laser heterostructures AlGaInAsSb/GaInSbAsP/GaSb(InAs) for middle infra-red range

This work shows that pentanary solid solutions (PSS) AlGaInAsSb and GaInSbAsP isoperiodic to GaSb and InAs substrates give wide possibilities to control heterojunction parameters. Heterojunctions I, II and III types can be formed for the lightwave range /spl lambda/=3-4/spl mu/m. Valence and conductivity band offsets can be varied in a wide range at a constant energy gap of the active region. AlGaInAsSb/GaInSbAsP/GaSb(InAs) heterostructures were grown from Sb-rich melts by liquid phase epitaxy (LPE) method at 570-600 /spl deg/C.

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5th International Workshop on Laser and Fiber-Optical Networks Modeling, 2003. Proceedings of LFNM 2003.

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