采用低噪声有源负载的5k 2GHz砷化镓跨阻放大器

R. Bayruns, T. Laverick, N. Scheinberg, Kuohsiung Li
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引用次数: 4

摘要

在300MHz频率下,gd = 42mS, L = 15nH,rai为一半。在2GHz频率下,1;:为7.8~10 ~~ a ~/ Hz,小于M2和200欧姆电阻。图3显示了包含感性负载的跨阻放大器的原理图。该电路有两个增益级;第一级采用反相级联,第二级采用非反相差分放大器级。该电路采用d模技术制造,栅极长度为0.5pm, fTof25GHz。跨导为170mS/ mm, Idss为140mA/mm,引脚电压为-0.8V。图4显示了跨阻放大器的显微照片。芯片是2毫米。反馈电阻器采用薄膜镍铬化工艺制作,片电阻为50*5% ohdsquare。整个场效应管外围约2mm。从V漏出的电流为lOOmA,从Vas漏出的电流为75mA。图5为三种Cdiode + Cstra为0.6pF的前置放大器芯片的实测光频响应。菱形曲线表示的是没有电感L的前置放大器和一个3k ω q的响应,3dB带宽约为2GHz。图2中电感负载的前置放大器响应曲线,用方框标出。反馈电阻值增加到约5k欧姆,3dB带宽约2.2GHz。用圆圈标记的曲线是相同的5k欧姆前置放大器,但没有电感负载。在没有电感负载的情况下,3dB带宽降低到1.4GHz。图6显示了相同三个前置放大器的噪声特性。由于h的增加,中频噪声已从约2.7pA/ &降至约2.1pNG。(式1)在lGHz频率下,噪声已从约5.7pNk降至约4pNG。这种噪声的降低是由于负载装置的噪声降低。表1列出了前置放大器的性能结果。这些结果与最近报道的单片跨阻放大器相比是有利的。参考文献2使用2k-ohm反馈电阻获得2GHz带宽,噪声约为5pNGat 100MHz。参考文献3中使用了一个800欧姆的反馈电阻来实现2GHz的带宽。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 5k 2GHz GaAs Transimpedance Amplifier Using A Low-noise Active Load
At a frequency of 300MHz with gd = 42mS and L = 15nH,rai is half. At a frequency of 2GHz, 1;: is 7.8~10-~~A~/ Hz which is less than M2 and a 200-ohm resistor. Figure 3 shows a schematic of the transimpedance amplifier including the inductive load. This circuit has two gain stages; the first uses an inverting cascode stage, and the second stage is a non-inverting differential amplifier stage. The circuit is fabricated in a D-mode technology with a 0.5pm gate length and a fTof25GHz. The transconductance is 170mS/ mm, the Idss is 140mA/mm, and the pinchoff voltage is -0.8V. Figure 4 shows a micrograph of the transimpedance amplifier. The chip is 2mm2. The feedback resistor is made with a thin-film nichrome process which has a sheet resistance of 50*5% ohdsquare. The total FET periphery is about 2mm. The current drain from V, is lOOmA and from Vas is 75mA. Figure 5 shows the measured optical frequency response of three preamplifier chips with Cdiode + Cstra of 0.6pF. The curve with the diamonds shows the response ofya preamp without inductor L , and a 3k-ohm Q. The 3dB bandwidth is about 2GHz. The response curve, marked with the squares is of a preamp with the inductor load of Figure 2. The feedback resistor value is increased to about 5k-ohms and has a 3dB bandwidth of about 2.2GHz. The curve marked with the circles is of the same 5k-ohm preamp, but without the inductor load. Without the inductor load, the 3dB bandwidth is reduced to 1.4GHz. Figure 6 shows noise characteristics of the same three preamps. The midband noise has been reduced to about 2.7pA/ &to about 2.1pNG due to the increase in h. (Equation 1) At a fre uency of lGHz, the noise has been reduced from about 5.7pNk to about 4pNG. This decrease in noise results from the reduction in noise from the load device. (Equation 5) Table 1 lists the performance results obtained with the preamplifier. These results compare favorably to recently reported monolithic transimpedance amplifiers. Reference 2 obtains 2GHz bandwidth with a 2k-ohm feedback resistor and has a noise of about 5pNGat 100MHz. A 800-ohm feedback resistor is used in Reference 3 to achieve 2GHz bandwidth.
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