{"title":"低电压时基CMOS有源像素传感器","authors":"Kunhee Cho, Dongmyung Lee, G. Han","doi":"10.1109/SOCDC.2008.4815582","DOIUrl":null,"url":null,"abstract":"This paper proposes a low voltage time based CMOS active pixel sensor (TBAPS). The TBAPS applies the ramp signal to the pixel and performs the charge-to-time conversion in the pixel. The readout circuit detects the moment of event rather than reading the voltage signal. The proposed TBAPS improves the detection of the low illumination signal compared with the conventional TBAPS. The simulation results show that the proposed scheme provides 1 V signal range with a 1.5 V power supply voltage and 22% fill factor of 2.2 mum pixel pitch in a 0.13 mum CMOS technology.","PeriodicalId":405078,"journal":{"name":"2008 International SoC Design Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low voltage time based CMOS active pixel sensor\",\"authors\":\"Kunhee Cho, Dongmyung Lee, G. Han\",\"doi\":\"10.1109/SOCDC.2008.4815582\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes a low voltage time based CMOS active pixel sensor (TBAPS). The TBAPS applies the ramp signal to the pixel and performs the charge-to-time conversion in the pixel. The readout circuit detects the moment of event rather than reading the voltage signal. The proposed TBAPS improves the detection of the low illumination signal compared with the conventional TBAPS. The simulation results show that the proposed scheme provides 1 V signal range with a 1.5 V power supply voltage and 22% fill factor of 2.2 mum pixel pitch in a 0.13 mum CMOS technology.\",\"PeriodicalId\":405078,\"journal\":{\"name\":\"2008 International SoC Design Conference\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International SoC Design Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOCDC.2008.4815582\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International SoC Design Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCDC.2008.4815582","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
提出了一种低电压时基CMOS有源像素传感器(TBAPS)。TBAPS将斜坡信号应用于像素，并在像素中执行电荷-时间转换。读出电路检测事件的时刻而不是读取电压信号。与传统的TBAPS相比，提出的TBAPS提高了对低照度信号的检测能力。仿真结果表明，该方案在0.13 μ m CMOS技术下，在1.5 V电源电压和2.2 μ m像素间距的22%填充系数下提供1 V的信号范围。
This paper proposes a low voltage time based CMOS active pixel sensor (TBAPS). The TBAPS applies the ramp signal to the pixel and performs the charge-to-time conversion in the pixel. The readout circuit detects the moment of event rather than reading the voltage signal. The proposed TBAPS improves the detection of the low illumination signal compared with the conventional TBAPS. The simulation results show that the proposed scheme provides 1 V signal range with a 1.5 V power supply voltage and 22% fill factor of 2.2 mum pixel pitch in a 0.13 mum CMOS technology.
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