具有应变硅沟道的高性能功率mosfet

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487983

Young‐Kyun Cho, S. Kwon, Hee-Bum Jung, Jongdae Kim

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引用次数: 2

摘要

为了提高高压MOSFET的电流可驱动性和导通电阻特性，我们提出了一种采用应变硅沟道结构的新型功率MOSFET。20nm厚应变硅低场沟道NMOSFET具有0.75/spl mu/m厚Si/sub 0.8/Ge/sub 0.2/缓冲层，与传统Si沟道高压NMOSFET相比，驱动电流提高了20%，导通电阻降低了25%，击穿电压和亚阈值斜率特性分别降低了6%和8%。此外，应变si高压NMOSFET在线性和饱和状态下的跨导率分别提高了28%和52%。

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High performance power MOSFETs with strained-Si channel

To improve a current drivability and an on-resistance characteristic of the high voltage MOSFET, we propose a novel power MOSFET employing a strained-Si channel structure. A 20nm thick strained-Si low field channel NMOSFET with a 0.75/spl mu/m thick Si/sub 0.8/Ge/sub 0.2/ buffer layer improved the drive current by 20% with a 25% reduction in on-resistance compared with conventional Si channel high voltage NMOSFET, while suppressing breakdown voltage and subthreshold slope characteristic degradation by 6% and 8% respectively. Also, the strained-Si high voltage NMOSFET improved the transconductance by 28% and 52% at linear and saturation regime.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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