{"title":"考虑亚微米图样制造极限的良率预测方法","authors":"N. Hattori, M. Ikeno, H. Nagata","doi":"10.1109/ISSM.1994.729443","DOIUrl":null,"url":null,"abstract":"Many random defects are caused by deposited particles during the manufacturing processes. Therefore, defect density and yield have been predicted from the information of particle characterization and the feature analysis of designed patterns to take effective measures for yield enhancement. The report gives the procedure of this prediction and discusses the parameters for the use in the critical fabrication size. Our parametric improvement provides an accurate prediction.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"114 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Yield Prediction Method Considering The Limit Of Sub-Micron Pattern Fabrication\",\"authors\":\"N. Hattori, M. Ikeno, H. Nagata\",\"doi\":\"10.1109/ISSM.1994.729443\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Many random defects are caused by deposited particles during the manufacturing processes. Therefore, defect density and yield have been predicted from the information of particle characterization and the feature analysis of designed patterns to take effective measures for yield enhancement. The report gives the procedure of this prediction and discusses the parameters for the use in the critical fabrication size. Our parametric improvement provides an accurate prediction.\",\"PeriodicalId\":114928,\"journal\":{\"name\":\"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM\",\"volume\":\"114 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.1994.729443\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.1994.729443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Yield Prediction Method Considering The Limit Of Sub-Micron Pattern Fabrication
Many random defects are caused by deposited particles during the manufacturing processes. Therefore, defect density and yield have been predicted from the information of particle characterization and the feature analysis of designed patterns to take effective measures for yield enhancement. The report gives the procedure of this prediction and discusses the parameters for the use in the critical fabrication size. Our parametric improvement provides an accurate prediction.