石墨外延Josephson结和直流squid

M. Faley, D. Meertens, U. Poppe, R. Dunin‐Borkowski
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引用次数: 3

摘要

我们在单晶MgO衬底上制备了具有石墨外延阶边Josephson结的直流squid的高tc超导异质结构,并使用原子力显微镜、扫描电子显微镜和高分辨率透射电子显微镜等互补表征技术对其进行了研究。观察了YBa2Cu3O7-x (YBCO)薄膜在MgO衬底台阶边缘倾斜表面上的外延(面外)和石墨外延(面内)生长。高tc阶边Josephson结具有良好的重现性,在77 K下的IcRn产物约为600 μV。采用阶梯边结的直流squid在77 K时的电压波动δVpp可达60 μV左右。石墨外延阶边约瑟夫森结的高Rn值有利于其作为量子比特的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Graphoepitaxial Josephson junctions and DC SQUIDs
We have prepared high-Tc superconducting heterostructures for DC SQUIDs with graphoepitaxial step edge Josephson junctions on single crystal MgO substrates and investigated them using complementary characterization techniques, including atomic force microscopy, scanning electron microscopy and high-resolution transmission electron microscopy. Combined epitaxial (out-of-plane) and graphoepitaxial (in-plane) growth of YBa2Cu3O7-x (YBCO) films on the tilted surfaces of step edges on MgO substrates was observed. The high-Tc step-edge Josephson junctions demonstrated a good reproducibility and an IcRn product of about 600 μV at 77 K. The DC SQUIDs with step edge junctions showed voltage swings δVpp of up to about 60 μV at 77 K. High values of Rn of the graphoepitaxial step edge Josephson junctions can be advantageous for their applications as qubits.
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