{"title":"基于全分布模型的分布式放大器时域有限差分分析","authors":"R. Mirzavand, A. Abdipour, A. A. Shishegar","doi":"10.1109/APACE.2007.4603907","DOIUrl":null,"url":null,"abstract":"In this paper a wave approach has been introduced to study the performance of a distributed amplifier. The time domain response of a FET is obtained by means of the fully distributed model. By applying the procedure to a pi-gate GaAs MESFET, the S matrix is computed from time domain results over a frequency range of 2-20 GHz. Scattering parameters of gate and drain lines are extracted from three-dimensional FDTD simulation. The result obtained by this wave approach is compared with device lumped model and Quasi static approach of transmission line.","PeriodicalId":356424,"journal":{"name":"2007 Asia-Pacific Conference on Applied Electromagnetics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"FDTD analysis of distributed amplifiers based on the fully distributed model\",\"authors\":\"R. Mirzavand, A. Abdipour, A. A. Shishegar\",\"doi\":\"10.1109/APACE.2007.4603907\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a wave approach has been introduced to study the performance of a distributed amplifier. The time domain response of a FET is obtained by means of the fully distributed model. By applying the procedure to a pi-gate GaAs MESFET, the S matrix is computed from time domain results over a frequency range of 2-20 GHz. Scattering parameters of gate and drain lines are extracted from three-dimensional FDTD simulation. The result obtained by this wave approach is compared with device lumped model and Quasi static approach of transmission line.\",\"PeriodicalId\":356424,\"journal\":{\"name\":\"2007 Asia-Pacific Conference on Applied Electromagnetics\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Asia-Pacific Conference on Applied Electromagnetics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APACE.2007.4603907\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Asia-Pacific Conference on Applied Electromagnetics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APACE.2007.4603907","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
FDTD analysis of distributed amplifiers based on the fully distributed model
In this paper a wave approach has been introduced to study the performance of a distributed amplifier. The time domain response of a FET is obtained by means of the fully distributed model. By applying the procedure to a pi-gate GaAs MESFET, the S matrix is computed from time domain results over a frequency range of 2-20 GHz. Scattering parameters of gate and drain lines are extracted from three-dimensional FDTD simulation. The result obtained by this wave approach is compared with device lumped model and Quasi static approach of transmission line.
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