{"title":"采用0.5/spl mu/m ED PHEMT和新的电路拓扑，提高了微波达林顿放大器的效率、ip3带宽和鲁棒性","authors":"K. Kobayashi","doi":"10.1109/CSICS.2005.1531769","DOIUrl":null,"url":null,"abstract":"This paper reports on the first results of a self-biased e-mode PHEMT Darlington amplifier. The e-mode PHEMTs enable a FET Darlington implementation while a new Darlington active bias topology reduces bias variation over temperature and supply, and improves overall efficiency by reducing supply operation. A 3.3V-75mA amplifier achieves a BW of 0.1-14GHz, 12.3dB gain, NF of 3.5dB, IP3 and P1dB of 33.1dBm and 16dBm @ 2GHz, respectively. A 5V-75mA amplifier achieves a 0.1-10 GHz BW, 20.2 dB gain, NF of 2.9 dB, IP3 and P1dB of 34.2dBm and 21.8dBm @ 2 GHz, respectively. The new PHEMT Darlington amplifier design enables a factor of 2 better IP3-bandwidth product and lower voltage operation capability compared to InGaP-based Darlington amplifiers.","PeriodicalId":149955,"journal":{"name":"IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05.","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Improved efficiency, IP3-bandwidth and robustness of a microwave Darlington amplifier using 0.5/spl mu/m ED PHEMT and a new circuit topology\",\"authors\":\"K. Kobayashi\",\"doi\":\"10.1109/CSICS.2005.1531769\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on the first results of a self-biased e-mode PHEMT Darlington amplifier. The e-mode PHEMTs enable a FET Darlington implementation while a new Darlington active bias topology reduces bias variation over temperature and supply, and improves overall efficiency by reducing supply operation. A 3.3V-75mA amplifier achieves a BW of 0.1-14GHz, 12.3dB gain, NF of 3.5dB, IP3 and P1dB of 33.1dBm and 16dBm @ 2GHz, respectively. A 5V-75mA amplifier achieves a 0.1-10 GHz BW, 20.2 dB gain, NF of 2.9 dB, IP3 and P1dB of 34.2dBm and 21.8dBm @ 2 GHz, respectively. The new PHEMT Darlington amplifier design enables a factor of 2 better IP3-bandwidth product and lower voltage operation capability compared to InGaP-based Darlington amplifiers.\",\"PeriodicalId\":149955,\"journal\":{\"name\":\"IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05.\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2005.1531769\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2005.1531769","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improved efficiency, IP3-bandwidth and robustness of a microwave Darlington amplifier using 0.5/spl mu/m ED PHEMT and a new circuit topology
This paper reports on the first results of a self-biased e-mode PHEMT Darlington amplifier. The e-mode PHEMTs enable a FET Darlington implementation while a new Darlington active bias topology reduces bias variation over temperature and supply, and improves overall efficiency by reducing supply operation. A 3.3V-75mA amplifier achieves a BW of 0.1-14GHz, 12.3dB gain, NF of 3.5dB, IP3 and P1dB of 33.1dBm and 16dBm @ 2GHz, respectively. A 5V-75mA amplifier achieves a 0.1-10 GHz BW, 20.2 dB gain, NF of 2.9 dB, IP3 and P1dB of 34.2dBm and 21.8dBm @ 2 GHz, respectively. The new PHEMT Darlington amplifier design enables a factor of 2 better IP3-bandwidth product and lower voltage operation capability compared to InGaP-based Darlington amplifiers.
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