{"title":"电流增益-梯度基Si/Si/sub -x/Ge/sub -x/ Si异质结双极晶体管的早期电压产品","authors":"E. Prinz, J. Sturm","doi":"10.1109/DRC.1991.664678","DOIUrl":null,"url":null,"abstract":"Summary form only given. An examination is made of the current-gain-Early-voltage ( beta -V/sub A/) tradeoff for graded base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors (HBTs). A two-layer stepped-based structure was used to achieve a beta V/sub A/ product greater than 100000 V at room temperature for a device predicted to have a cutoff frequency in excess of 10 GHz. This is an improvement of this figure of merit by a factor greater than 20. It is shown that the Early voltage in a bipolar transistor can be improved dramatically by inserting a thin heavily doped p/sup +/-SiGe layer at the collector side of the base, without any reduction in gain. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"298 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Current Gain - Early Voltage Products In Graded Base Si/Si/sub 1-x/Ge/sub x/Si Heterojunction Bipolar Transistors\",\"authors\":\"E. Prinz, J. Sturm\",\"doi\":\"10.1109/DRC.1991.664678\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. An examination is made of the current-gain-Early-voltage ( beta -V/sub A/) tradeoff for graded base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors (HBTs). A two-layer stepped-based structure was used to achieve a beta V/sub A/ product greater than 100000 V at room temperature for a device predicted to have a cutoff frequency in excess of 10 GHz. This is an improvement of this figure of merit by a factor greater than 20. It is shown that the Early voltage in a bipolar transistor can be improved dramatically by inserting a thin heavily doped p/sup +/-SiGe layer at the collector side of the base, without any reduction in gain. >\",\"PeriodicalId\":269691,\"journal\":{\"name\":\"[1991] 49th Annual Device Research Conference Digest\",\"volume\":\"298 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] 49th Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1991.664678\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] 49th Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1991.664678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Current Gain - Early Voltage Products In Graded Base Si/Si/sub 1-x/Ge/sub x/Si Heterojunction Bipolar Transistors
Summary form only given. An examination is made of the current-gain-Early-voltage ( beta -V/sub A/) tradeoff for graded base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors (HBTs). A two-layer stepped-based structure was used to achieve a beta V/sub A/ product greater than 100000 V at room temperature for a device predicted to have a cutoff frequency in excess of 10 GHz. This is an improvement of this figure of merit by a factor greater than 20. It is shown that the Early voltage in a bipolar transistor can be improved dramatically by inserting a thin heavily doped p/sup +/-SiGe layer at the collector side of the base, without any reduction in gain. >
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