采用λ/4-less Doherty功率组合器的65纳米CMOS递归卡片屋数字功率放大器

Loai G. Salem, J. Buckwalter, P. Mercier
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引用次数: 5

摘要

本文提出了一种DC-RF功率逆变器,该逆变器利用薄氧化物CMOS开关直接从电池电压有效地合成高压RF波形。与堆叠晶体管或采用大电感转换比不同,高输出功率是通过在两相卡屋(HoC)拓扑中切换单个d类功率放大器(PA)单元来产生的,从而在不超过器件额定电压的情况下为单元输出提供电压附加,从而有效地产生固态射频阻抗变压器。然后,通过电容性地组合两个名义上设置为产生不同幅度的HoC网络的输出,实现了高效率的回退,从而实现了电压模式的Doherty-like回退,而无需庞大的传输线。PA采用65nm体积LP CMOS实现,工作电压为4.8V,在720MHz的23dBm和6dB回退下,电池对射频的效率均高于40%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A recursive house-of-cards digital power amplifier employing a λ/4-less Doherty power combiner in 65nm CMOS
This paper presents a DC-RF power inverter that efficiently synthesizes high-voltage RF waveforms directly from a battery voltage using thin-oxide CMOS switches. Instead of stacking transistors or employing large inductive transformation ratios, high output power is generated by switching individual class-D power amplifier (PA) cells in a 2-phase house-of-cards (HoC) topology to provide voltage addition of the cells outputs without exceeding device voltage ratings, effectively resulting in a solid-state RF impedance transformer. High-efficiency at backoff is then achieved by capacitively combining the output of two HoC networks nominally set to generate different amplitudes, enabling voltage-mode Doherty-like backoff without a bulky transmission line. The PA is implemented in 65nm bulk LP CMOS, operates from 4.8V, and provides a battery-to-RF efficiency above 40% at both 23dBm and 6dB backoff at 720MHz.
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