F. L. Ogboi, P. Tasker, Muhammad Akmal, J. Lees, J. Benedikt, S. Bensmida, K. Morris, M. Beach, J. Mcgeehan
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引用次数: 2
摘要
在[1]中，引入了一种新的公式，用于量化在输出偏置端口注入的线性化基带电压信号，以线性化器件行为。这种方法的一个关键特征是，由于它是在包络域中制定的，所需的线性化系数的数量与包络形状、复杂性无关。通过对10W Cree GaN HEMT器件进行基带线性化研究，验证了该特性。在1.5dB的压缩下，采用了3、5和9音调制刺激。在所有情况下，为了计算必要的输出基带信号包络线，只需要确定两个线性化系数。互调失真降低到-50dBc左右，这个值非常接近测量系统的动态范围极限。
Investigation of Various Envelope Complexity Linearity under Modulated Stimulus Using a New Envelope Formulation Approach
In [1] a new formulation for quantifying the linearizing baseband voltage signal, injected at the output bias port, to linearize a device behaviour was introduced. A key feature of this approach is that since it is formulated in the envelope domain the number of linearization coefficient required is independent of the envelope shape, complexity. This property is validated by performing baseband linearization investigations on a 10W Cree GaN HEMT device. Modulated signals with increasing complexity 3, 5, and 9-tone modulated stimulus, at 1.5dB of compression, were utilized. In all cases just two-linearization coefficients needed to be determined in order to compute the output baseband signal envelope necessary. Intermodulation distortion was reduced to around -50dBc, a value very close to the dynamic range limit of the measurement system.
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