S. Bhattacharya, V. Ponnambalam, A. Pope, P. Alboni, Y. Xia, T. Tritt, S. J. Poon
{"title":"Sb掺杂TiNiSn/sub - 1-x/Sb/sub -x/ half-Heusler体系的热电性质","authors":"S. Bhattacharya, V. Ponnambalam, A. Pope, P. Alboni, Y. Xia, T. Tritt, S. J. Poon","doi":"10.1109/ICT.1999.843398","DOIUrl":null,"url":null,"abstract":"Half Heusler alloys, MNiSn (M=Zr, Hf, Ti) systems, have recently been studied for their potential as new thermoelectric materials. They have shown both high thermopower (/spl alpha/) values (40-250 /spl mu/V/K) and reasonable values of electrical resistivity, /spl rho/ (0.1-8 m/spl Omega/-cm). However, the thermal conductivity in these systems is high for a potential thermoelectric material, on the order of 4-10 W/m-K. In an effort to reduce the thermal conductivity through alloy scattering, Sb is substituted on the Sn site with compositions TiNiSn/sub 1-x/Sb/sub x/ where x=0 to 0.1. With this substitution, the thermopower is only slightly reduced while the resistivity is reduced by approximately one order of magnitude resulting in marked improvement in the power factor (/spl alpha//sup 2/T//spl rho/). Thermopower, resistivity, and thermal conductivity have been measured on a series of Sb doped TiNiSn samples from 10 K<T<300 K. Heat capacity and Hall measurements on these same samples are measured from 2 K to 350 K and will be discussed. A room temperature power factor in this system has been calculated to be as high as 1.4 W/m-K, making these materials interesting for potential thermoelectric applications.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermoelectric properties of Sb-doping in the TiNiSn/sub 1-x/Sb/sub x/ half-Heusler system\",\"authors\":\"S. Bhattacharya, V. Ponnambalam, A. Pope, P. Alboni, Y. Xia, T. Tritt, S. J. Poon\",\"doi\":\"10.1109/ICT.1999.843398\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Half Heusler alloys, MNiSn (M=Zr, Hf, Ti) systems, have recently been studied for their potential as new thermoelectric materials. They have shown both high thermopower (/spl alpha/) values (40-250 /spl mu/V/K) and reasonable values of electrical resistivity, /spl rho/ (0.1-8 m/spl Omega/-cm). However, the thermal conductivity in these systems is high for a potential thermoelectric material, on the order of 4-10 W/m-K. In an effort to reduce the thermal conductivity through alloy scattering, Sb is substituted on the Sn site with compositions TiNiSn/sub 1-x/Sb/sub x/ where x=0 to 0.1. With this substitution, the thermopower is only slightly reduced while the resistivity is reduced by approximately one order of magnitude resulting in marked improvement in the power factor (/spl alpha//sup 2/T//spl rho/). Thermopower, resistivity, and thermal conductivity have been measured on a series of Sb doped TiNiSn samples from 10 K<T<300 K. Heat capacity and Hall measurements on these same samples are measured from 2 K to 350 K and will be discussed. A room temperature power factor in this system has been calculated to be as high as 1.4 W/m-K, making these materials interesting for potential thermoelectric applications.\",\"PeriodicalId\":253439,\"journal\":{\"name\":\"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICT.1999.843398\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.1999.843398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermoelectric properties of Sb-doping in the TiNiSn/sub 1-x/Sb/sub x/ half-Heusler system
Half Heusler alloys, MNiSn (M=Zr, Hf, Ti) systems, have recently been studied for their potential as new thermoelectric materials. They have shown both high thermopower (/spl alpha/) values (40-250 /spl mu/V/K) and reasonable values of electrical resistivity, /spl rho/ (0.1-8 m/spl Omega/-cm). However, the thermal conductivity in these systems is high for a potential thermoelectric material, on the order of 4-10 W/m-K. In an effort to reduce the thermal conductivity through alloy scattering, Sb is substituted on the Sn site with compositions TiNiSn/sub 1-x/Sb/sub x/ where x=0 to 0.1. With this substitution, the thermopower is only slightly reduced while the resistivity is reduced by approximately one order of magnitude resulting in marked improvement in the power factor (/spl alpha//sup 2/T//spl rho/). Thermopower, resistivity, and thermal conductivity have been measured on a series of Sb doped TiNiSn samples from 10 K