A high current enhancement type N-channel InGaAs MOSFET on InP substrate with a maximum drain current of 1.3 A/mm

In this paper, a high performance inversion type enhancement mode N-channel In0.65Ga0.35As MOSFET has been presented. A maximum drain current of more than 1.3 A/mm has been achieved with a transconductance of 430 mS/mm. This value of maximum drain current is nearly 25% greater than that previously reported in literature. A gate threshold voltage of 0.8 V has been achieved for a gate length of 0.6 μm, which is sufficiently high to ensure fail safe operation of the device in the integrated circuit environment. Extensive simulations have been performed in order to analyze the effect of varying the gate length on the gate-source threshold voltage. Furthermore, a thorough investigation has been conducted about the variations in maximum drain current under the effect of varying doping concentration of drain and source regions. The maximum value of drain current of 1.3 A/mm has been extrapolated linearly from a 1 micron wide device.