{"title":"双材料栅极纳米RingFET (DMG-RingFET)模拟和数字应用的TCAD评估","authors":"Sachin Kumar, V. Kumari, Mridula Gupta, M. Saxena","doi":"10.1109/ICDCSYST.2014.6926181","DOIUrl":null,"url":null,"abstract":"In this work, the impact of gate material engineering on the performance of RingFET architecture i.e. Dual Material Gate RingFET (DMG-RingFET) has been investigated for the first time using ATLAS 3D device simulation. A fair comparison has also been drawn between the performance of DMG-RingFET and SMG RingFET device architectures. The impact of high-k gate dielectric on the performance of DMG RingFET has also been presented. Various important analog and digital performance metrics such as drain current (Ids), transconductance (gm), transconductance generation efficiency (gm/Ids), early voltage (Vea), output voltage of inverter and inverter gain has been discussed in detail. In addition to this investigation of DMG-RingFET as an inverter has been performed to demonstrate the reliability of DMG-RingFET architecture for digital circuit application.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"TCAD assessment of dual material gate nanoscale RingFET (DMG-RingFET) for analog and digital applications\",\"authors\":\"Sachin Kumar, V. Kumari, Mridula Gupta, M. Saxena\",\"doi\":\"10.1109/ICDCSYST.2014.6926181\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the impact of gate material engineering on the performance of RingFET architecture i.e. Dual Material Gate RingFET (DMG-RingFET) has been investigated for the first time using ATLAS 3D device simulation. A fair comparison has also been drawn between the performance of DMG-RingFET and SMG RingFET device architectures. The impact of high-k gate dielectric on the performance of DMG RingFET has also been presented. Various important analog and digital performance metrics such as drain current (Ids), transconductance (gm), transconductance generation efficiency (gm/Ids), early voltage (Vea), output voltage of inverter and inverter gain has been discussed in detail. In addition to this investigation of DMG-RingFET as an inverter has been performed to demonstrate the reliability of DMG-RingFET architecture for digital circuit application.\",\"PeriodicalId\":252016,\"journal\":{\"name\":\"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICDCSYST.2014.6926181\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSYST.2014.6926181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
TCAD assessment of dual material gate nanoscale RingFET (DMG-RingFET) for analog and digital applications
In this work, the impact of gate material engineering on the performance of RingFET architecture i.e. Dual Material Gate RingFET (DMG-RingFET) has been investigated for the first time using ATLAS 3D device simulation. A fair comparison has also been drawn between the performance of DMG-RingFET and SMG RingFET device architectures. The impact of high-k gate dielectric on the performance of DMG RingFET has also been presented. Various important analog and digital performance metrics such as drain current (Ids), transconductance (gm), transconductance generation efficiency (gm/Ids), early voltage (Vea), output voltage of inverter and inverter gain has been discussed in detail. In addition to this investigation of DMG-RingFET as an inverter has been performed to demonstrate the reliability of DMG-RingFET architecture for digital circuit application.
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