发射极开关晶闸管的实验演示

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 1991-04-22 DOI:10.1109/ISPSD.1991.146082

M. S. Shekar, B. J. Baliga, M. Nandakumar, S. Tandon, A. Reisman

{"title":"发射极开关晶闸管的实验演示","authors":"M. S. Shekar, B. J. Baliga, M. Nandakumar, S. Tandon, A. Reisman","doi":"10.1109/ISPSD.1991.146082","DOIUrl":null,"url":null,"abstract":"The operation of 600 V forward blocking emitter switched thyristors (ESTs) has been experimentally demonstrated. The devices were fabricated using an IGBT baseline process with six masking steps. The forward I-V and turnoff characteristics have been measured and corroborated through two-dimensional numerical simulations. The output characteristics are close to a thyristor with an additional drop of about 0.5 V across the lateral MOSFET. Switching tests were performed up to a current density of 1000 A/cm/sup 2/ on single unit cells, and the measured turn-off times were about 7 mu s. A unique feature of the EST which is not seen in any other MOS-gated thyristor devices is saturation of thyristor current even after latch up of the main thyristor. This feature is very important for applications requiring current limiting and short circuit protection.<<ETX>>","PeriodicalId":127986,"journal":{"name":"[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Experimental demonstration of the emitter switched thyristor\",\"authors\":\"M. S. Shekar, B. J. Baliga, M. Nandakumar, S. Tandon, A. Reisman\",\"doi\":\"10.1109/ISPSD.1991.146082\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The operation of 600 V forward blocking emitter switched thyristors (ESTs) has been experimentally demonstrated. The devices were fabricated using an IGBT baseline process with six masking steps. The forward I-V and turnoff characteristics have been measured and corroborated through two-dimensional numerical simulations. The output characteristics are close to a thyristor with an additional drop of about 0.5 V across the lateral MOSFET. Switching tests were performed up to a current density of 1000 A/cm/sup 2/ on single unit cells, and the measured turn-off times were about 7 mu s. A unique feature of the EST which is not seen in any other MOS-gated thyristor devices is saturation of thyristor current even after latch up of the main thyristor. This feature is very important for applications requiring current limiting and short circuit protection.<<ETX>>\",\"PeriodicalId\":127986,\"journal\":{\"name\":\"[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"92 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1991.146082\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1991.146082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

实验证明了600 V正向阻断发射极开关晶闸管(ESTs)的工作原理。该器件采用IGBT基线工艺制造，具有六个掩蔽步骤。通过二维数值模拟，测量并验证了正向I-V和关断特性。输出特性接近晶闸管，在侧面MOSFET上有大约0.5 V的额外下降。在单个单元电池上进行了高达1000 a /cm/sup 2/的电流密度的开关测试，测量的关断时间约为7 μ s。EST的一个独特特性是在任何其他mos门控晶闸管器件中都没有看到的，即在主晶闸管锁存后晶闸管电流饱和。该特性对于需要限流和短路保护的应用非常重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Experimental demonstration of the emitter switched thyristor

The operation of 600 V forward blocking emitter switched thyristors (ESTs) has been experimentally demonstrated. The devices were fabricated using an IGBT baseline process with six masking steps. The forward I-V and turnoff characteristics have been measured and corroborated through two-dimensional numerical simulations. The output characteristics are close to a thyristor with an additional drop of about 0.5 V across the lateral MOSFET. Switching tests were performed up to a current density of 1000 A/cm/sup 2/ on single unit cells, and the measured turn-off times were about 7 mu s. A unique feature of the EST which is not seen in any other MOS-gated thyristor devices is saturation of thyristor current even after latch up of the main thyristor. This feature is very important for applications requiring current limiting and short circuit protection.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs

自引率

0.00%

发文量