Sergeh Vartanian, J. Yang-Scharlotta, G. Allen, A. Daniel, D. Costanzo, F. Mancoff, D. Symalla, Andy Olsen
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Total Ionizing Dose and Reliability Evaluation of the ST-DDR4 Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM)
We present total ionizing dose (TID) evaluation of the Everspin Technologies 1Gb non-volatile ST-DDR4 spin-transfer torque MRAM, and its effects on the reliability of the magnetic tunnel junctions (MTJs).