ST-DDR4自旋转移转矩磁阻随机存取存储器(STT-MRAM)总电离剂量及可靠性评价

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI:10.1109/REDW56037.2022.9921476

Sergeh Vartanian, J. Yang-Scharlotta, G. Allen, A. Daniel, D. Costanzo, F. Mancoff, D. Symalla, Andy Olsen

{"title":"ST-DDR4自旋转移转矩磁阻随机存取存储器(STT-MRAM)总电离剂量及可靠性评价","authors":"Sergeh Vartanian, J. Yang-Scharlotta, G. Allen, A. Daniel, D. Costanzo, F. Mancoff, D. Symalla, Andy Olsen","doi":"10.1109/REDW56037.2022.9921476","DOIUrl":null,"url":null,"abstract":"We present total ionizing dose (TID) evaluation of the Everspin Technologies 1Gb non-volatile ST-DDR4 spin-transfer torque MRAM, and its effects on the reliability of the magnetic tunnel junctions (MTJs).","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Total Ionizing Dose and Reliability Evaluation of the ST-DDR4 Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM)\",\"authors\":\"Sergeh Vartanian, J. Yang-Scharlotta, G. Allen, A. Daniel, D. Costanzo, F. Mancoff, D. Symalla, Andy Olsen\",\"doi\":\"10.1109/REDW56037.2022.9921476\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present total ionizing dose (TID) evaluation of the Everspin Technologies 1Gb non-volatile ST-DDR4 spin-transfer torque MRAM, and its effects on the reliability of the magnetic tunnel junctions (MTJs).\",\"PeriodicalId\":202271,\"journal\":{\"name\":\"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW56037.2022.9921476\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW56037.2022.9921476","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们对Everspin Technologies的1Gb非挥发性ST-DDR4自旋传递扭矩MRAM进行了总电离剂量(TID)评估，并分析了其对磁隧道结(MTJs)可靠性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Total Ionizing Dose and Reliability Evaluation of the ST-DDR4 Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM)

We present total ionizing dose (TID) evaluation of the Everspin Technologies 1Gb non-volatile ST-DDR4 spin-transfer torque MRAM, and its effects on the reliability of the magnetic tunnel junctions (MTJs).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)

自引率

0.00%

发文量