{"title":"四阶椭圆型全差分IIR开关电容低通滤波器的VLSI实现","authors":"R. Bozomitu, N. Cojan, G. Bonteanu","doi":"10.1109/SIITME.2013.6743649","DOIUrl":null,"url":null,"abstract":"In this paper a VLSI implementation of the 4th order elliptic fully differential IIR switched-capacitor low-pass filter in CMOS technology is presented. The proposed LPF is composed of two switched-capacitor biquad filter structures connected in cascade. Its transfer function is determined by computing the discrete Fourier transform of the impulse response function. The circuit is implemented on the basis of some building blocks such as operational transconductance amplifiers, transmission gate switches, capacitors and non-overlapping clocks generator. The simulations performed in 180nm CMOS technology confirm the theoretical results.","PeriodicalId":267846,"journal":{"name":"2013 IEEE 19th International Symposium for Design and Technology in Electronic Packaging (SIITME)","volume":"606 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A VLSI implementation of the 4th order elliptic fully differential IIR switched-capacitor low-pass filter in CMOS technology\",\"authors\":\"R. Bozomitu, N. Cojan, G. Bonteanu\",\"doi\":\"10.1109/SIITME.2013.6743649\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a VLSI implementation of the 4th order elliptic fully differential IIR switched-capacitor low-pass filter in CMOS technology is presented. The proposed LPF is composed of two switched-capacitor biquad filter structures connected in cascade. Its transfer function is determined by computing the discrete Fourier transform of the impulse response function. The circuit is implemented on the basis of some building blocks such as operational transconductance amplifiers, transmission gate switches, capacitors and non-overlapping clocks generator. The simulations performed in 180nm CMOS technology confirm the theoretical results.\",\"PeriodicalId\":267846,\"journal\":{\"name\":\"2013 IEEE 19th International Symposium for Design and Technology in Electronic Packaging (SIITME)\",\"volume\":\"606 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 19th International Symposium for Design and Technology in Electronic Packaging (SIITME)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIITME.2013.6743649\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 19th International Symposium for Design and Technology in Electronic Packaging (SIITME)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIITME.2013.6743649","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A VLSI implementation of the 4th order elliptic fully differential IIR switched-capacitor low-pass filter in CMOS technology
In this paper a VLSI implementation of the 4th order elliptic fully differential IIR switched-capacitor low-pass filter in CMOS technology is presented. The proposed LPF is composed of two switched-capacitor biquad filter structures connected in cascade. Its transfer function is determined by computing the discrete Fourier transform of the impulse response function. The circuit is implemented on the basis of some building blocks such as operational transconductance amplifiers, transmission gate switches, capacitors and non-overlapping clocks generator. The simulations performed in 180nm CMOS technology confirm the theoretical results.