具有氧化物侧壁间隔的高性能横向DMOSFET

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583768

R. Fujishima, A. Kitamura, Y. Nagayasu

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引用次数: 4

摘要

介绍了一种利用氧化物侧壁间隔片的新型横向DMOSFET。有效通道长度由隔离器的长度精确控制。通道长度为0.4 /spl mu/m的横向DMOSFET显示出低通道电阻，保持高穿通阻塞能力。该工艺与传统的1 /spl mu/m Bi-CMOS工艺兼容。通过二维过程和器件模拟器对器件特性进行了预测。并对测量结果进行了描述。所开发的DMOSFET具有0.143 /spl ω //spl middot/mm/sup 2/的优异导通电阻，可承受高达80 V左右的电压。

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High-performance lateral DMOSFET with oxide sidewall-spacers

A new lateral DMOSFET which utilizes oxide sidewall-spacers is described. The effective channel length is precisely controlled by the length of the spacer. The lateral DMOSFET with a channel length of 0.4 /spl mu/m shows a low channel resistance keeping high punch-through blocking capability. The process is compatible with the conventional 1 /spl mu/m Bi-CMOS process. The device characteristics are predicted by two-dimensional process and device simulators. Measurement results are also described. The developed DMOSFET shows an excellent specific on-resistance of 0.143 /spl Omega//spl middot/mm/sup 2/ and can withstand up to around 80 V.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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