采用氧化钆开关材料的低电流交叉点存储器

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839686

D. Jana, S. Maikap, Y. Chen, J. Yang

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引用次数: 0

摘要

本文首次研究了在IrOx/GdOx/W结构中使用氧化钆开关材料的低电流交叉点存储器。存储器件具有低电流双极电阻性开关现象和自适应现象，开关周期可重复，均匀性好，每个周期的编程/擦除寿命>60k，在50 μA的低CC下，数据保持时间>104 s。

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Low current cross-point memory using gadolinium-oxide switching material

Low current cross-point memory using gadolinium-oxide switching material in an IrOx/GdOx/W structure has been investigated for the first time. Memory device shows low current bipolar resistive switching phenomena and self-compliance phenomena as well, repeatable switching cycles, good uniformity, long program/erase endurance of >60k every cycles, and good data retention of >104 s at a low CC of 50 μA.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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