砷化镓(001)衬底上砷化铟量子点形成动力学

2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI:10.1109/EDM.2009.5173921

A. Lyamkina, D. Dmitriev, S. P. Moshchenko, A. Toropov

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引用次数: 0

摘要

研究了液滴外延中量子点形成的动力学。根据沉积铟量和生长中断指定了最佳生长参数值。结果表明，与stranski - krstanov方法相比，液滴外延可以使量子点密度降低一个数量级，并得到光谱红移。由光谱分析可知，生长中断增加导致大量子点峰面积/小量子点峰面积的比例增加，表明存在物质再分布的瞬态过程。

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Kinetics of indium arsenide quantum dots formation on gallium arsenide (001) substrate

Kinetics of quantum dots (QDs) formation in droplet epitaxy is investigated. Optimal growth parameter values are specified for deposited indium amount and growth interruption. It is shown that droplet epitaxy allows to decrease QDs density by an order of magnitude and get spectrum red-shift in comparison with Stranski-Krastanov method. As it follows from spectra analysis, growth interruption increase results in the increase of a ratio large QDs peaks area/small QDs peaks area which indicates that there are transient processes with material redistribution.

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2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices

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