具有GaN PHEMT等效性能的低成本ka波段7W GaAs PHEMT HPA

K. Fujii
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引用次数: 4

摘要

本文介绍了一种输出功率超过7W的超低成本MMIC高功率放大器。MMIC采用GaAs PHEMT工艺制造,最先进的紧凑模具面积为13.7mm2。HPA MMIC包含相位和幅度补偿输出功率合成器和超低损耗相位补偿级间匹配网络。基于GaN PHEMT的四级放大器具有7W的饱和输出功率和24dB的小信号增益,峰值输出功率为8.3W,功率附加效率(PAE)为27%。这种低成本MMIC HPA的生产成本比基于GaN PHEMT的MMIC HPA低约10倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low cost Ka-band 7W GaAs PHEMT based HPA with GaN PHEMT equivalent performance
This paper describes a very low cost MMIC high power amplifier (HPA) with output power of over 7W. The MMIC was fabricated using a GaAs PHEMT process with a state-of-the-art compact die area of 13.7mm2. The HPA MMIC contains a phase and amplitude compensated output power combiner and super low loss phase compensated inter-stage matching networks. A four stage amplifier demonstrated commercially available GaN PHEMT based HPA equivalent performance with 7W saturated output power and 24dB small signal gain from 27.5GHz to 30GHz with peak output power of 8.3W and power added efficiency (PAE) of 27%. This low cost MMIC HPA achieved approximately 10-times lower production cost than GaN PHEMT based MMIC HPAs.
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