高k/金属栅极mosfet介电陷阱与BTI特性的相关性

2010 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2010-10-01 DOI:10.1109/IIRW.2010.5706475

J.Q. Yang, J.F. Yang, J. Kang, X.Y. Liu, R. Han, P. Kirsch, H. Tseng, R. Jammy

{"title":"高k/金属栅极mosfet介电陷阱与BTI特性的相关性","authors":"J.Q. Yang, J.F. Yang, J. Kang, X.Y. Liu, R. Han, P. Kirsch, H. Tseng, R. Jammy","doi":"10.1109/IIRW.2010.5706475","DOIUrl":null,"url":null,"abstract":"The extended flicker noise measurement incorporating with BTI evaluation is applied to investigate the bulk trapping density Nt in HK/MG stacks and the correlated BTI behaviors. An effective evaluating technique on BTI/TDDB is developed. This method will help to understand the physical original of BTI degradation.","PeriodicalId":332664,"journal":{"name":"2010 IEEE International Integrated Reliability Workshop Final Report","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Correlation between dielectric traps and BTI characteristics of high-k/ metal gate MOSFETs\",\"authors\":\"J.Q. Yang, J.F. Yang, J. Kang, X.Y. Liu, R. Han, P. Kirsch, H. Tseng, R. Jammy\",\"doi\":\"10.1109/IIRW.2010.5706475\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The extended flicker noise measurement incorporating with BTI evaluation is applied to investigate the bulk trapping density Nt in HK/MG stacks and the correlated BTI behaviors. An effective evaluating technique on BTI/TDDB is developed. This method will help to understand the physical original of BTI degradation.\",\"PeriodicalId\":332664,\"journal\":{\"name\":\"2010 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"101 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2010.5706475\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2010.5706475","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

将扩展闪烁噪声测量与BTI评价相结合，研究了HK/MG堆的体积捕获密度Nt及其相关的BTI行为。开发了一种有效的BTI/TDDB评价技术。该方法有助于了解BTI降解的物理根源。

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Correlation between dielectric traps and BTI characteristics of high-k/ metal gate MOSFETs

The extended flicker noise measurement incorporating with BTI evaluation is applied to investigate the bulk trapping density Nt in HK/MG stacks and the correlated BTI behaviors. An effective evaluating technique on BTI/TDDB is developed. This method will help to understand the physical original of BTI degradation.

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来源期刊

2010 IEEE International Integrated Reliability Workshop Final Report

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