{"title":"InGaAsSb封盖层对InAs/InGaAsSb量子点结构性能的影响","authors":"Yeongho Kim, N. Faleev, C. Honsberg","doi":"10.1109/PVSC.2015.7355809","DOIUrl":null,"url":null,"abstract":"The structural properties of the InAs QDs embedded in the InGaAsSb layers with varying In content of 3, 7, and 9 % have been investigated by x-ray diffraction. The In incorporation increases the in-plane and out-of-plane strain of the InGaAsSb in the structures. The density of crystalline defects is increased when the In content of 3 % is incorporated. However, the further increase of In content to 7 and 9 % leads to the decrease of the defect density as a result of the reduced lattice mismatch between the InAs QDs and InGaAsSb layers.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"7 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of InGaAsSb capping layer on the structural properties of InAs/InGaAsSb quantum dots\",\"authors\":\"Yeongho Kim, N. Faleev, C. Honsberg\",\"doi\":\"10.1109/PVSC.2015.7355809\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The structural properties of the InAs QDs embedded in the InGaAsSb layers with varying In content of 3, 7, and 9 % have been investigated by x-ray diffraction. The In incorporation increases the in-plane and out-of-plane strain of the InGaAsSb in the structures. The density of crystalline defects is increased when the In content of 3 % is incorporated. However, the further increase of In content to 7 and 9 % leads to the decrease of the defect density as a result of the reduced lattice mismatch between the InAs QDs and InGaAsSb layers.\",\"PeriodicalId\":427842,\"journal\":{\"name\":\"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)\",\"volume\":\"7 5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2015.7355809\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2015.7355809","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of InGaAsSb capping layer on the structural properties of InAs/InGaAsSb quantum dots
The structural properties of the InAs QDs embedded in the InGaAsSb layers with varying In content of 3, 7, and 9 % have been investigated by x-ray diffraction. The In incorporation increases the in-plane and out-of-plane strain of the InGaAsSb in the structures. The density of crystalline defects is increased when the In content of 3 % is incorporated. However, the further increase of In content to 7 and 9 % leads to the decrease of the defect density as a result of the reduced lattice mismatch between the InAs QDs and InGaAsSb layers.
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