考虑芯片焊料退化的改进IGBT模块Cauer模型

2023 IEEE 14th International Symposium on Power Electronics for Distributed Generation Systems (PEDG) Pub Date : 2023-06-09 DOI:10.1109/PEDG56097.2023.10215178

Qian Zhang, Mingyao Ma, Weisheng Guo, Fei Li, Hanyu Wang

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引用次数: 0

摘要

温度因素是导致IGBT模块失效的主要原因，准确估计IGBT模块结温对提高其可靠性至关重要。然而，现有的热模型在准确预测结温方面仍然存在一定的局限性，特别是当考虑到芯片焊料的退化时。本文采用蒙特卡罗代表性体积元发生器(MCRVEGen)算法建立了芯片焊料中空洞的真实模型。在此基础上，建立了考虑芯片焊料空隙的改进Cauer模型，并讨论了热参数的提取方法。最后，通过有限元仿真验证了所提模型的准确性。

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An Improved Cauer Model of IGBT Module Considering Chip Solder Degradation

The failure of insulated gate bipolar transistor (IGBT) modules is mainly attributed to temperature factors and accurate estimation of the junction temperature of IGBT modules is crucial to enhance their reliability. However, existing thermal models still have certain limitations in accurately predicting the junction temperature, particularly when considering the degradation of chip solder. In this paper, a realistic model of voids in the chip solder is created using the Monte Carlo Representative Volume Element Generator (MCRVEGen) algorithm. Additionally, an improved Cauer model that considers voids in the chip solder is established and the method for extracting thermal parameters is discussed. Finally, the accuracy of the proposed model is verified through finite element simulation.

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2023 IEEE 14th International Symposium on Power Electronics for Distributed Generation Systems (PEDG)

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