5G应用低Dk / Df介电材料

2022 International Conference on Electronics Packaging (ICEP) Pub Date : 2022-05-11 DOI:10.23919/ICEP55381.2022.9795630

Hirotatsu Ikarashi, Toshiyuki Sato, S. Teraki, Masaki Yoshida, H. Ozaki

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引用次数: 0

摘要

在本文中，我们开发了一种用于5G应用的新型低Dk / Df介电材料。这种材料是基于改性聚苯醚(m-PPE)和弹性体。它可以在200摄氏度下固化。该材料具有低Dk / Df，高Tg，低吸水率和低翘曲性能，因此它是5G晶圆级芯片尺寸封装(WL-CSP)和高性能计算(HPC)衬底的合适介质层。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low Dk / Df Dielectric Material for 5G Applications

In this paper, we have developed a new low Dk / Df dielectric material for 5G applications. This material is based on modified polyphenylene ether (m-PPE) and elastomer. It can be cured at 200 degrees Celsius. This material has low Dk / Df, high Tg, low water absorption and low warpage properties, therefore it is suitable dielectric layers for 5G Wafer Level Chip Size Packages (WL-CSP) and High-Performance Computing (HPC) substrates.

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来源期刊

2022 International Conference on Electronics Packaging (ICEP)

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