G. G. Devyatykh, A. Moiseev, A. V. Chilyasov, A. Kotkov, V. A. Ivanov, L.S. Vasiliev
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Effect of purity of the starting materials on the parameters of epitaxial GaAs, produced by MOCVD-method
High-purity arsine and trimethylgallium are used to produce A/sup 3/B/sup 5/ epitaxial layers by MOCVD-method for application in microwave devices and in optoelectronics. The present work is aimed to investigate the effect of purity of the starting materials on the electrophysical parameters of epitaxial gallium arsenide, produced by MOCVD-method, as well as to develop the technology for the production of high-purity arsine and TMG.
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