等离子体增强化学气相沉积制备氢化非晶碳薄膜

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743297

J. Huran, A. Kobzev, N. Balalykin, J. Pezoltd

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引用次数: 0

摘要

PECVD技术采用电容耦合等离子体反应器，通过淋头将甲烷引入等离子体反应器。采用RBS法和ERD法测定了a-C:H膜中的物质浓度。RBS结果显示了膜中C的主要浓度。氢的浓度约为20at .%。薄膜中含有少量的氧和氮。用红外光谱分析其化学成分。红外光谱结果显示存在碳氢键。

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Hydrogenated Amorphous Carbon Films Prepared by Plasma-enhanced Chemical Vapor Deposition

A capacitively coupled plasma reactor was used for PECVD technology, where methane was introduced into the plasma reactor through the shower head. The concentration of species in the a-C:H films were determined by RBS and ERD method. The RBS results showed the main concentrations of C in the films. The concentration of hydrogen was approximately 20 at.%. The films contain a small amount of oxygen and nitrogen. Chemical compositions were analyzed by IR spectroscopy. IR results showed the presence of C-H specific bonds.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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