铟和硼对体型和SOI型mosfet中反向窄通道效应的影响

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) Pub Date : 1900-01-01 DOI:10.1109/VTSA.1999.785992

A. van Meer, J. Lyu, S. Kubicek, S. De Meyer

{"title":"铟和硼对体型和SOI型mosfet中反向窄通道效应的影响","authors":"A. van Meer, J. Lyu, S. Kubicek, S. De Meyer","doi":"10.1109/VTSA.1999.785992","DOIUrl":null,"url":null,"abstract":"For the first time, experimental results are presented on the Reverse Narrow-Channel Effect (RNCE) in SOI and bulk MOSFETs using indium as a channel dopant. The presented results show that devices with an indium channel exhibit the same RNCE as devices with a boron channel, which refers to the same diffusion mechanisms in deep submicron devices.","PeriodicalId":237214,"journal":{"name":"1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"On the impact of indium and boron on the Reversed Narrow-Channel Effect (RNCE) in BULK and SOI MOSFETs\",\"authors\":\"A. van Meer, J. Lyu, S. Kubicek, S. De Meyer\",\"doi\":\"10.1109/VTSA.1999.785992\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time, experimental results are presented on the Reverse Narrow-Channel Effect (RNCE) in SOI and bulk MOSFETs using indium as a channel dopant. The presented results show that devices with an indium channel exhibit the same RNCE as devices with a boron channel, which refers to the same diffusion mechanisms in deep submicron devices.\",\"PeriodicalId\":237214,\"journal\":{\"name\":\"1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTSA.1999.785992\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.1999.785992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文首次在SOI和体mosfet中采用铟作为通道掺杂剂，获得了反向窄通道效应(RNCE)的实验结果。结果表明，含铟通道的器件与含硼通道的器件表现出相同的RNCE，这是指在深亚微米器件中相同的扩散机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On the impact of indium and boron on the Reversed Narrow-Channel Effect (RNCE) in BULK and SOI MOSFETs

For the first time, experimental results are presented on the Reverse Narrow-Channel Effect (RNCE) in SOI and bulk MOSFETs using indium as a channel dopant. The presented results show that devices with an indium channel exhibit the same RNCE as devices with a boron channel, which refers to the same diffusion mechanisms in deep submicron devices.

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1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)

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