ZnO Growth Properties in ZnO/SnS Heterojunction by a Combination of ECD and CBD Method

Zinc oxide thin films were deposited on tin monosulfide thin films from aqueous solution of N2O6Zn.6H2O and C6H12N4 by chemical bath deposition (CBD) method and produce ZnO/SnS heterojunction. Before that, SnS was deposited on indium-tin-oxide (ITO) coated glass substrate by electrochemical deposition (ECD) method. Hence, the ZnO growth properties were investigated from surface morphology, X-ray diffractometer (XRD) spectra, thickness, chemical composition and current density-voltage (J-V) measurement. The ZnO samples were deposited using three various deposition times, which are 10 hours, 20 hours and 30 hours at solution temperature of 90 °C. Then, the growth properties were investigated using field emission scanning electron microscope (FESEM), XRD, current-voltage (I-V) two point probes, energy dispersive X-ray Spectroscopy (EDX) and surface profiler. The thickness of ZnO/SnS heterojunction was 1.25-2.00 µm and the diameter of ZnO nanorods were 1.11-2.92 µm. All of ZnO peaks observed from XRD corresponding to the wurzite structure and all of SnS peak corresponding to orthorhombic structure. In addition, deposition time affects the J-V characteristic and J-V curve shows ZnO/SnS heterojunction with Schottky diode properties.