Non-Langevin recombination and radiation-induced conductivity in disordered dielectrics

Experimental data on radiation-induced conductivity (RIC) in disordered dielectrics are usually interpreted in terms of trap-controlled transport and recombination of charge carriers. This model explains behavior of both stationary and non-stationary RIC measured under various conditions. On the other hand, it is well established from first principles that transport and recombination of charge carriers must occur via hopping in most non-crystalline dielectrics. Recently, it was shown that the rate of carrier recombination is much lower than predicted by the well-known Langevin equation. In the present work, a model of suppressed recombination is suggested based on a hopping approach to charge-carrier kinetics in disordered materials.