一个基于45nm SOI CMOS的3.2GS/s 4.55b ENOB两步分位ADC

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI:10.1109/CICC.2012.6330610

J. Plouchart, M. Sanduleanu, Z. Deniz, T. Beukema, S. Reynolds, B. Parker, Michael P. Beakes, J. Tierno, D. Friedman

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引用次数: 2

摘要

采用45nm SOI-CMOS技术实现了一个3.2GS/s的两步子变换ADC。测量到的ENOB在1.6GHz时为4.55b。IIP3为-1.1dBm。功耗为22mW，电压为1.05V, FOM为290fJ/转换步长。该芯片的有效面积为0.07mm2。

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A 3.2GS/s 4.55b ENOB two-step subranging ADC in 45nm SOI CMOS

A 3.2GS/s two-step subranging ADC is implemented in a 45nm SOI-CMOS technology. The measured ENOB is 4.55b at 1.6GHz. The IIP3 is -1.1dBm. The power consumption is 22mW from a 1.05V voltage supply for a FOM of 290fJ/ conversion-step. The chip occupies an active area of 0.07mm2.

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Proceedings of the IEEE 2012 Custom Integrated Circuits Conference

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