CMOS环形振荡器热载流子及NBTI致器件退化分析

2013 3rd International Conference on Consumer Electronics, Communications and Networks Pub Date : 2013-11-01 DOI:10.1109/CECNET.2013.6703292

Hui Zhang, Chunzh Liu, Tao Wang, Hua Zhang, Chen Zeng

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引用次数: 2

摘要

研究了热载流子和负偏置温度不稳定性(NBTI)对CMOS环形振荡器性能的影响。这两种退化机制通过阈值电压(Vth)退化使振荡器的启动可靠性和振荡频率恶化。根据冲击分析，提出了一种对退化不敏感的改进环形振荡器。SPICE仿真结果表明，该振荡器具有较好的启动可靠性和频率稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of hot carrier and NBTI induced device degradation on CMOS ring oscillator

The degradation of CMOS ring oscillator caused by hot carrier and negative bias temperature instability (NBTI) is presented in this paper. These two degradation mechanisms deteriorate the oscillator's start-up reliability and the oscillation frequency by threshold voltage (Vth) degradation. According to impact analysis, an improved ring oscillator is proposed which is insensitive to degradation. The SPICE simulation shows that the oscillator has better start-up reliability and frequency stability.

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2013 3rd International Conference on Consumer Electronics, Communications and Networks

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