{"title":"具有两个梯度缓冲带Si0.18Ge0.82和优化基层Si0.18Ge0.82的InGaP/SiGe双结太阳能电池系统的设计与仿真","authors":"Hojatollah Poudineh, Mohammad Reza Ghorbani Fard","doi":"10.1109/EExPolytech53083.2021.9614737","DOIUrl":null,"url":null,"abstract":"In this work, a dual-junction InGaP/SiGe solar cell system with two graded buffer regions Si0.18Ge0.82 is proposed. The focus is on the effect of optimizing the SiGe Base layer. The Silvaco ATLAS device simulator is used to simulate 1 sun illumination under standard AM1.5G spectrum. Also, various performance parameters such as open-circuit voltage, short-circuit current density, Efficiency, and Fill Factor are analyzed and compared with the published results from recent literature. For the proposed structure, the following parameters are obtained for the base layer Si0.18Ge0.82: Ish = 20.2995 mA/cm2, Voc= 2.0574 V, η= 36.54 % and FF = 87.55 %.","PeriodicalId":141827,"journal":{"name":"2021 International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"77 9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and Simulation of InGaP/SiGe Dual-Junction Solar Cell System with Two Graded Buffer Regions Si0.18Ge0.82 and Optimizing Base Layer Si0.18Ge0.82\",\"authors\":\"Hojatollah Poudineh, Mohammad Reza Ghorbani Fard\",\"doi\":\"10.1109/EExPolytech53083.2021.9614737\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a dual-junction InGaP/SiGe solar cell system with two graded buffer regions Si0.18Ge0.82 is proposed. The focus is on the effect of optimizing the SiGe Base layer. The Silvaco ATLAS device simulator is used to simulate 1 sun illumination under standard AM1.5G spectrum. Also, various performance parameters such as open-circuit voltage, short-circuit current density, Efficiency, and Fill Factor are analyzed and compared with the published results from recent literature. For the proposed structure, the following parameters are obtained for the base layer Si0.18Ge0.82: Ish = 20.2995 mA/cm2, Voc= 2.0574 V, η= 36.54 % and FF = 87.55 %.\",\"PeriodicalId\":141827,\"journal\":{\"name\":\"2021 International Conference on Electrical Engineering and Photonics (EExPolytech)\",\"volume\":\"77 9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on Electrical Engineering and Photonics (EExPolytech)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EExPolytech53083.2021.9614737\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Electrical Engineering and Photonics (EExPolytech)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EExPolytech53083.2021.9614737","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and Simulation of InGaP/SiGe Dual-Junction Solar Cell System with Two Graded Buffer Regions Si0.18Ge0.82 and Optimizing Base Layer Si0.18Ge0.82
In this work, a dual-junction InGaP/SiGe solar cell system with two graded buffer regions Si0.18Ge0.82 is proposed. The focus is on the effect of optimizing the SiGe Base layer. The Silvaco ATLAS device simulator is used to simulate 1 sun illumination under standard AM1.5G spectrum. Also, various performance parameters such as open-circuit voltage, short-circuit current density, Efficiency, and Fill Factor are analyzed and compared with the published results from recent literature. For the proposed structure, the following parameters are obtained for the base layer Si0.18Ge0.82: Ish = 20.2995 mA/cm2, Voc= 2.0574 V, η= 36.54 % and FF = 87.55 %.
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