Single Event Transient Effect on Tapered Angle Hetero-junction Dopingless TFET for Radiation Sensitive Applications

In this paper, a brief study of the single event effect transient effect is presented for gate engineered tapered angle hetero-junction dopingless TFET for examining its reliability in a radiation-sensitive environment. When a heavyion particle strikes the TFET structure, it leads to the generation and recombination of the charged particles along the track path of the ions. The effect of the different energy densities of charged ion is studied, in which with an increase in the LET’s the leakage current also increases at 10 MeV.cm2/mg it reaches 0.453 mA/µm. At 1 MeV.cm2/mg of the energy density of ions is radiated on the whole device structure at different positions; it is observed that the drainchannel region is the most sensitive region of the structure studied.