{"title":"/spl α /-粒子诱导的亚微米SOI SRAM软误差","authors":"Y. Tosaka, K. Suzuki, T. Sugii","doi":"10.1109/VLSIT.1995.520849","DOIUrl":null,"url":null,"abstract":"We found the critical /spl alpha/-particle-induced generated charge which determines the soft errors in SOI SRAMs and showed that the soft error rate in submicron SOI SRAMs without body contacts is sometimes larger than that for bulk SRAMs due to the bipolar effect. This suggests the necessity for body contacts or for other technologies in SOI SRAM structures to reduce the bipolar effect.","PeriodicalId":328379,"journal":{"name":"1995 Symposium on VLSI Technology. Digest of Technical Papers","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"/spl alpha/-particle-induced soft errors in submicron SOI SRAM\",\"authors\":\"Y. Tosaka, K. Suzuki, T. Sugii\",\"doi\":\"10.1109/VLSIT.1995.520849\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We found the critical /spl alpha/-particle-induced generated charge which determines the soft errors in SOI SRAMs and showed that the soft error rate in submicron SOI SRAMs without body contacts is sometimes larger than that for bulk SRAMs due to the bipolar effect. This suggests the necessity for body contacts or for other technologies in SOI SRAM structures to reduce the bipolar effect.\",\"PeriodicalId\":328379,\"journal\":{\"name\":\"1995 Symposium on VLSI Technology. Digest of Technical Papers\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 Symposium on VLSI Technology. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1995.520849\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 Symposium on VLSI Technology. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1995.520849","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
/spl alpha/-particle-induced soft errors in submicron SOI SRAM
We found the critical /spl alpha/-particle-induced generated charge which determines the soft errors in SOI SRAMs and showed that the soft error rate in submicron SOI SRAMs without body contacts is sometimes larger than that for bulk SRAMs due to the bipolar effect. This suggests the necessity for body contacts or for other technologies in SOI SRAM structures to reduce the bipolar effect.
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